Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation

	Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation
	Di, ZF ; Chu, PK ; Zhang, M ; Liu, WL ; Song, ZT ; Lin, CL
刊名	JOURNAL OF APPLIED PHYSICS
	2005
卷号	97 期号:6 页码:64504-64504
关键词	FIELD-EFFECT TRANSISTORS STRAINED-SI MOBILITY ENHANCEMENT OXIDATION ELECTRON
ISSN号	0021-8979
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95297]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Di, ZF,Chu, PK,Zhang, M,et al. Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation[J]. JOURNAL OF APPLIED PHYSICS,2005,97(6):64504-64504.
APA	Di, ZF,Chu, PK,Zhang, M,Liu, WL,Song, ZT,&Lin, CL.(2005).Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation.JOURNAL OF APPLIED PHYSICS,97(6),64504-64504.
MLA	Di, ZF,et al."Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation".JOURNAL OF APPLIED PHYSICS 97.6(2005):64504-64504.