Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory

	Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory
	Liu, WL ; Lee, PF ; Dai, JY ; Wang, J ; Chan, HLW ; Choy, CL ; Song, ZT ; Feng, SL
刊名	APPLIED PHYSICS LETTERS
	2005
卷号	86 期号:1 页码:13110-13110
关键词	CHEMICAL-VAPOR-DEPOSITION DEVICE HFO2 DIELECTRICS OXIDATION SIO2
ISSN号	0003-6951
通讯作者	Dai, JY, Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95296]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu, WL,Lee, PF,Dai, JY,et al. Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory[J]. APPLIED PHYSICS LETTERS,2005,86(1):13110-13110.
APA	Liu, WL.,Lee, PF.,Dai, JY.,Wang, J.,Chan, HLW.,...&Feng, SL.(2005).Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory.APPLIED PHYSICS LETTERS,86(1),13110-13110.
MLA	Liu, WL,et al."Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory".APPLIED PHYSICS LETTERS 86.1(2005):13110-13110.