A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs

	A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs
	Yang, WW ; Cheng, XH ; Yu, YH ; Song, ZR ; Shen, DS
刊名	SOLID-STATE ELECTRONICS
	2005
卷号	49 期号:1 页码:43-48
关键词	SURFACE FIELD DISTRIBUTION THRESHOLD VOLTAGE RESURF DEVICES OPTIMIZATION
ISSN号	0038-1101
通讯作者	Yang, WW, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95286]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Yang, WW,Cheng, XH,Yu, YH,et al. A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs[J]. SOLID-STATE ELECTRONICS,2005,49(1):43-48.
APA	Yang, WW,Cheng, XH,Yu, YH,Song, ZR,&Shen, DS.(2005).A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs.SOLID-STATE ELECTRONICS,49(1),43-48.
MLA	Yang, WW,et al."A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs".SOLID-STATE ELECTRONICS 49.1(2005):43-48.