Total dose radiation tolerance of phase change memory cell with GeSbTe alloy

	Total dose radiation tolerance of phase change memory cell with GeSbTe alloy
	Wu, LC ; Liu, B ; Song, ZT ; Feng, GM ; Feng, SL ; Chen, B
刊名	CHINESE PHYSICS LETTERS
	2006
卷号	23 期号:9 页码:2557-2559
关键词	AMORPHOUS THIN-FILMS RANDOM-ACCESS MEMORY GE2SB2TE5 FILMS ELECTRICAL-PROPERTIES NONVOLATILE GE20TE80-XBIX IMPLANTATION TEMPERATURE TRANSITION
ISSN号	0256-307X
通讯作者	Wu, LC, Chinese Acad Sci, Lab Nanotechnol, Res Ctr Funct Semicond Film Engn & Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95232]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wu, LC,Liu, B,Song, ZT,et al. Total dose radiation tolerance of phase change memory cell with GeSbTe alloy[J]. CHINESE PHYSICS LETTERS,2006,23(9):2557-2559.
APA	Wu, LC,Liu, B,Song, ZT,Feng, GM,Feng, SL,&Chen, B.(2006).Total dose radiation tolerance of phase change memory cell with GeSbTe alloy.CHINESE PHYSICS LETTERS,23(9),2557-2559.
MLA	Wu, LC,et al."Total dose radiation tolerance of phase change memory cell with GeSbTe alloy".CHINESE PHYSICS LETTERS 23.9(2006):2557-2559.