Effect of implantation dose and annealing time on the formation of si nanocrystals embedded in thermal oxide

	Effect of implantation dose and annealing time on the formation of si nanocrystals embedded in thermal oxide
	Qian, C ; Zhang, ZX ; Zhang, F ; Lin, CL
刊名	Ion-Beam-Based Nanofabrication
	2007
卷号	1020 页码:195-200
关键词	SILICON PHOTOLUMINESCENCE NANOCLUSTERS HOLE
ISSN号	0272-9172
通讯作者	Qian, C, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Natl Key Lab Funct Mat Informatic, Rm 514,6 Bldg,865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Materials Science, Multidisciplinary
收录类别	SCI
原文出处	http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7994032
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95117]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Qian, C,Zhang, ZX,Zhang, F,et al. Effect of implantation dose and annealing time on the formation of si nanocrystals embedded in thermal oxide[J]. Ion-Beam-Based Nanofabrication,2007,1020:195-200.
APA	Qian, C,Zhang, ZX,Zhang, F,&Lin, CL.(2007).Effect of implantation dose and annealing time on the formation of si nanocrystals embedded in thermal oxide.Ion-Beam-Based Nanofabrication,1020,195-200.
MLA	Qian, C,et al."Effect of implantation dose and annealing time on the formation of si nanocrystals embedded in thermal oxide".Ion-Beam-Based Nanofabrication 1020(2007):195-200.