Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells

	Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells
	Cao, M ; Lao, YF ; Wu, HZ ; Liu, C ; Xie, ZS ; Cao, CF ; Wu, HZ
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
	2008
卷号	26 期号:2 页码:219-223
关键词	DAMAGE DIODES RECOMBINATION LIGHT
ISSN号	0734-2101
通讯作者	Cao, M, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Materials Science, Coatings & Films; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94964]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cao, M,Lao, YF,Wu, HZ,et al. Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2008,26(2):219-223.
APA	Cao, M.,Lao, YF.,Wu, HZ.,Liu, C.,Xie, ZS.,...&Wu, HZ.(2008).Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,26(2),219-223.
MLA	Cao, M,et al."Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26.2(2008):219-223.