The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation

	The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation
	Zeng, JM ; Zheng, LR ; Lin, CL ; Alexe, M ; Pignolet, A ; Hesse, D
刊名	PHYSICS LETTERS A
	1999
卷号	251 期号:5 页码:336-339
关键词	CAPACITORS PB(ZR TI)O-3 DEGRADATION INTEGRATION DAMAGE
ISSN号	0375-9601
通讯作者	Zeng, JM, Chinese Acad Sci, Shanghai Inst Met, Natl Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/99140]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Zeng, JM,Zheng, LR,Lin, CL,et al. The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation[J]. PHYSICS LETTERS A,1999,251(5):336-339.
APA	Zeng, JM,Zheng, LR,Lin, CL,Alexe, M,Pignolet, A,&Hesse, D.(1999).The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation.PHYSICS LETTERS A,251(5),336-339.
MLA	Zeng, JM,et al."The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation".PHYSICS LETTERS A 251.5(1999):336-339.