Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process | |
Huang, JP ; Wang, LW ; Wen, U ; Wang, YX ; Lin, CL ; Zetterling, CM ; Ostling, M | |
刊名 | WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 |
1999 | |
卷号 | 572页码:207-212 |
关键词 | CHEMICAL-VAPOR-DEPOSITION CARBIDE TEMPERATURE DEVICES |
ISSN号 | 0272-9172 |
通讯作者 | Huang, JP, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
学科主题 | Materials Science, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/99115] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前) |
推荐引用方式 GB/T 7714 | Huang, JP,Wang, LW,Wen, U,et al. Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process[J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999,1999,572:207-212. |
APA | Huang, JP.,Wang, LW.,Wen, U.,Wang, YX.,Lin, CL.,...&Ostling, M.(1999).Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process.WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999,572,207-212. |
MLA | Huang, JP,et al."Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process".WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 572(1999):207-212. |
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