Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition
Xin,HP ; Shi,XH ; Lin,CG ; Xu,WP ; Zheng,LR ; Zou,SC
刊名THIN SOLID FILMS
1997
卷号293期号:1-2页码:17-21
关键词STRESS-INDUCED FORMATION SILICON BN DIAMOND GROWTH
ISSN号0040-6090
通讯作者Xin, HP, CHINESE ACAD SCI,SHANGHAI INST MET,NATL LAB FUNCT MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA
学科主题Materials Science ; Multidisciplinary; Materials Science ; Coatings & Films; Physics ; Applied; Physics ; Condensed Matter
收录类别SCI
公开日期2012-03-25
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/98870]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
Xin,HP,Shi,XH,Lin,CG,et al. Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition[J]. THIN SOLID FILMS,1997,293(1-2):17-21.
APA Xin,HP,Shi,XH,Lin,CG,Xu,WP,Zheng,LR,&Zou,SC.(1997).Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition.THIN SOLID FILMS,293(1-2),17-21.
MLA Xin,HP,et al."Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition".THIN SOLID FILMS 293.1-2(1997):17-21.
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