Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures

	Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures
	Shen, WZ ; Shen, SC ; Chang, Y ; Tang, WG ; Lu, Y ; Li, AZ
刊名	APPLIED PHYSICS LETTERS
	1996
卷号	68 期号:1 页码:78-80
关键词	VAPOR-PHASE EPITAXY RADIATIVE RECOMBINATION MATERIAL PARAMETERS DEVICE APPLICATIONS BAND-GAPS GAAS TEMPERATURE
ISSN号	0003-6951
通讯作者	Shen, WZ, SHANGHAI INST TECH PHYS,NATL LAB INFRARED PHYS,SHANGHAI 200033,PEOPLES R CHINA
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98757]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	Shen, WZ,Shen, SC,Chang, Y,et al. Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures[J]. APPLIED PHYSICS LETTERS,1996,68(1):78-80.
APA	Shen, WZ,Shen, SC,Chang, Y,Tang, WG,Lu, Y,&Li, AZ.(1996).Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures.APPLIED PHYSICS LETTERS,68(1),78-80.
MLA	Shen, WZ,et al."Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures".APPLIED PHYSICS LETTERS 68.1(1996):78-80.