A NOTE ON THE SILICON-CARBIDE TRANSITION LAYER BETWEEN SILICON SUBSTRATE AND DIAMOND FILM
QIMIN,W ; QINGGUI,C ; RIHUA,S ; RONGKANG,D ; JIAN,Z
刊名JOURNAL OF HARD MATERIALS
1995
卷号6期号:1页码:45-49
关键词NUCLEATION GROWTH
ISSN号0954-027X
通讯作者QIMIN, W, CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LABS TRANSDUCER TECHNOL,865 CHANGNING RD,SHANGHAI 200050,PEOPLES R CHINA
学科主题Materials Science, Multidisciplinary
收录类别SCI
原文出处http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=186&SID=Q17j6Ejh3Mi@ML3HG1p&page=1&doc=1
语种英语
公开日期2012-03-25
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/98668]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文(1999年以前)
推荐引用方式
GB/T 7714
QIMIN,W,QINGGUI,C,RIHUA,S,et al. A NOTE ON THE SILICON-CARBIDE TRANSITION LAYER BETWEEN SILICON SUBSTRATE AND DIAMOND FILM[J]. JOURNAL OF HARD MATERIALS,1995,6(1):45-49.
APA QIMIN,W,QINGGUI,C,RIHUA,S,RONGKANG,D,&JIAN,Z.(1995).A NOTE ON THE SILICON-CARBIDE TRANSITION LAYER BETWEEN SILICON SUBSTRATE AND DIAMOND FILM.JOURNAL OF HARD MATERIALS,6(1),45-49.
MLA QIMIN,W,et al."A NOTE ON THE SILICON-CARBIDE TRANSITION LAYER BETWEEN SILICON SUBSTRATE AND DIAMOND FILM".JOURNAL OF HARD MATERIALS 6.1(1995):45-49.
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