HOT-ELECTRON HIGH-FREQUENCY MOBILITY IN WIDE-AND NARROW-GAP SEMICONDUCTORS

	HOT-ELECTRON HIGH-FREQUENCY MOBILITY IN WIDE-AND NARROW-GAP SEMICONDUCTORS
	WENG, XM ; LEI, XL（雷啸霖）
刊名	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
	1995
卷号	187 期号:2 页码:579-588
关键词	TRANSPORT CONDUCTIVITY IMPURITY FIELD BAND
ISSN号	0370-1972
通讯作者	WENG, XM, CHINESE ACAD SCI, SHANGHAI INST MET, STATE KEY LAB FUNCT MAT INFORMAT, 865 CHANGNING RD, SHANGHAI 200050, PEOPLES R CHINA
学科主题	Physics, Condensed Matter
收录类别	SCI
原文出处	http://onlinelibrary.wiley.com/doi/10.1002/pssb.2221870242/abstract
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98645]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	WENG, XM,LEI, XL. HOT-ELECTRON HIGH-FREQUENCY MOBILITY IN WIDE-AND NARROW-GAP SEMICONDUCTORS[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,1995,187(2):579-588.
APA	WENG, XM,&LEI, XL.(1995).HOT-ELECTRON HIGH-FREQUENCY MOBILITY IN WIDE-AND NARROW-GAP SEMICONDUCTORS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,187(2),579-588.
MLA	WENG, XM,et al."HOT-ELECTRON HIGH-FREQUENCY MOBILITY IN WIDE-AND NARROW-GAP SEMICONDUCTORS".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 187.2(1995):579-588.