OPTICAL EFFECTS OF DOPED TOP LAYERS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION

	OPTICAL EFFECTS OF DOPED TOP LAYERS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION
	YU,YH ; LIN,CG ; Zou,SC
刊名	JOURNAL OF MATERIALS SCIENCE
	1995
卷号	30 期号:13 页码:3539-3542
ISSN号	0022-2461
通讯作者	YU, YH, CHINESE ACAD SCI,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA
学科主题	Materials Science ; Multidisciplinary
收录类别	SCI
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98589]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	YU,YH,LIN,CG,Zou,SC. OPTICAL EFFECTS OF DOPED TOP LAYERS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION[J]. JOURNAL OF MATERIALS SCIENCE,1995,30(13):3539-3542.
APA	YU,YH,LIN,CG,&Zou,SC.(1995).OPTICAL EFFECTS OF DOPED TOP LAYERS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION.JOURNAL OF MATERIALS SCIENCE,30(13),3539-3542.
MLA	YU,YH,et al."OPTICAL EFFECTS OF DOPED TOP LAYERS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION".JOURNAL OF MATERIALS SCIENCE 30.13(1995):3539-3542.