OBSERVATION OF SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI

	OBSERVATION OF SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI
	LIU,P ; LIN,CL ; ZHOU,ZY ; Zou,SC ; WENG,HM ; HAN,RD ; LI,BZ
刊名	APPLIED PHYSICS LETTERS
	1994
卷号	64 期号:19 页码:2501-2503
关键词	VACANCIES GAAS BEAM
ISSN号	0003-6951
通讯作者	LIU, P, CHINESE ACAD SCI,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA
学科主题	Physics ; Applied
收录类别	SCI
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98558]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	LIU,P,LIN,CL,ZHOU,ZY,et al. OBSERVATION OF SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI[J]. APPLIED PHYSICS LETTERS,1994,64(19):2501-2503.
APA	LIU,P.,LIN,CL.,ZHOU,ZY.,Zou,SC.,WENG,HM.,...&LI,BZ.(1994).OBSERVATION OF SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI.APPLIED PHYSICS LETTERS,64(19),2501-2503.
MLA	LIU,P,et al."OBSERVATION OF SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO/TI/SI AND CO/SI".APPLIED PHYSICS LETTERS 64.19(1994):2501-2503.