THE EFFECT OF SI, F IMPLANTATION ON THE FORMATION AND LIGHT-EMITTING PROPERTIES OF POROUS SILICON

	THE EFFECT OF SI, F IMPLANTATION ON THE FORMATION AND LIGHT-EMITTING PROPERTIES OF POROUS SILICON
	WANG,LW ; LIN,CL ; LIU,P ; ZHOU,ZY ; Zou,SC
刊名	MATERIALS SYNTHESIS AND PROCESSING USING ION BEAMS
	1994
卷号	316 期号:0 页码:445-450
ISSN号	0272-9172
学科主题	Materials Science ; Multidisciplinary
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=290&SID=Q17j6Ejh3Mi@ML3HG1p&page=1&doc=1
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98495]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	WANG,LW,LIN,CL,LIU,P,et al. THE EFFECT OF SI, F IMPLANTATION ON THE FORMATION AND LIGHT-EMITTING PROPERTIES OF POROUS SILICON[J]. MATERIALS SYNTHESIS AND PROCESSING USING ION BEAMS,1994,316(0):445-450.
APA	WANG,LW,LIN,CL,LIU,P,ZHOU,ZY,&Zou,SC.(1994).THE EFFECT OF SI, F IMPLANTATION ON THE FORMATION AND LIGHT-EMITTING PROPERTIES OF POROUS SILICON.MATERIALS SYNTHESIS AND PROCESSING USING ION BEAMS,316(0),445-450.
MLA	WANG,LW,et al."THE EFFECT OF SI, F IMPLANTATION ON THE FORMATION AND LIGHT-EMITTING PROPERTIES OF POROUS SILICON".MATERIALS SYNTHESIS AND PROCESSING USING ION BEAMS 316.0(1994):445-450.