QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

	QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
	YANG, YF ; HOUSTON, PA ; HOPKINSON, M
刊名	ELECTRONICS LETTERS
	1992
卷号	28 期号:2 页码:145-147
ISSN号	0013-5194
通讯作者	YANG, YF, UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
学科主题	Engineering, Electrical & Electronic
收录类别	SCI
原文出处	http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=00118934
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98420]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	YANG, YF,HOUSTON, PA,HOPKINSON, M. QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS[J]. ELECTRONICS LETTERS,1992,28(2):145-147.
APA	YANG, YF,HOUSTON, PA,&HOPKINSON, M.(1992).QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS.ELECTRONICS LETTERS,28(2),145-147.
MLA	YANG, YF,et al."QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS".ELECTRONICS LETTERS 28.2(1992):145-147.