PHOTOQUENCHING OF ELECTRONIC PARAMAGNETIC-RESONANCE ASGA AND METASTABLE MECHANISM OF EL2 DEFECT IN GAAS

	PHOTOQUENCHING OF ELECTRONIC PARAMAGNETIC-RESONANCE ASGA AND METASTABLE MECHANISM OF EL2 DEFECT IN GAAS
	ZOU, YX ; WANG, GY
刊名	CHINESE PHYSICS
	1989
卷号	9 期号:4 页码:976-981
ISSN号	0273-429X
通讯作者	ZOU, YX, CHINESE ACAD SCI,SHANGHAI INST MET,BEIJING,PEOPLES R CHINA
学科主题	Physics, Multidisciplinary
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=24&SID=Q17j6Ejh3Mi@ML3HG1p&page=1&doc=1
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98206]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	ZOU, YX,WANG, GY. PHOTOQUENCHING OF ELECTRONIC PARAMAGNETIC-RESONANCE ASGA AND METASTABLE MECHANISM OF EL2 DEFECT IN GAAS[J]. CHINESE PHYSICS,1989,9(4):976-981.
APA	ZOU, YX,&WANG, GY.(1989).PHOTOQUENCHING OF ELECTRONIC PARAMAGNETIC-RESONANCE ASGA AND METASTABLE MECHANISM OF EL2 DEFECT IN GAAS.CHINESE PHYSICS,9(4),976-981.
MLA	ZOU, YX,et al."PHOTOQUENCHING OF ELECTRONIC PARAMAGNETIC-RESONANCE ASGA AND METASTABLE MECHANISM OF EL2 DEFECT IN GAAS".CHINESE PHYSICS 9.4(1989):976-981.