The properties of high-k gate dielectric films deposited on HRSOI

	The properties of high-k gate dielectric films deposited on HRSOI
	Cheng, XH ; Xu, DP ; Song, ZR ; He, DW ; Yu, YH ; Zhao, QT ; Shen, DS
刊名	MICROELECTRONIC ENGINEERING
	2009
卷号	86 期号:12 页码:2404-2407
关键词	SOI CAPACITORS
ISSN号	0167-9317
通讯作者	Cheng, XH, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Changning Rd 865, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94884]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng, XH,Xu, DP,Song, ZR,et al. The properties of high-k gate dielectric films deposited on HRSOI[J]. MICROELECTRONIC ENGINEERING,2009,86(12):2404-2407.
APA	Cheng, XH.,Xu, DP.,Song, ZR.,He, DW.,Yu, YH.,...&Shen, DS.(2009).The properties of high-k gate dielectric films deposited on HRSOI.MICROELECTRONIC ENGINEERING,86(12),2404-2407.
MLA	Cheng, XH,et al."The properties of high-k gate dielectric films deposited on HRSOI".MICROELECTRONIC ENGINEERING 86.12(2009):2404-2407.