InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

	InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching
	Cao, M ; Wu, HZ ; Lao, YF ; Cao, CF ; Liu, C
刊名	MATERIALS RESEARCH BULLETIN
	2009
卷号	44 期号:12 页码:2217-2221
关键词	VAPOR-PHASE EPITAXY INASP/INP ENHANCEMENT PHOTOLUMINESCENCE LUMINESCENCE DEPENDENCE DOTS GAP
ISSN号	0025-5408
通讯作者	Cao, M, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
学科主题	Materials Science, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94877]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cao, M,Wu, HZ,Lao, YF,et al. InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching[J]. MATERIALS RESEARCH BULLETIN,2009,44(12):2217-2221.
APA	Cao, M,Wu, HZ,Lao, YF,Cao, CF,&Liu, C.(2009).InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching.MATERIALS RESEARCH BULLETIN,44(12),2217-2221.
MLA	Cao, M,et al."InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching".MATERIALS RESEARCH BULLETIN 44.12(2009):2217-2221.