Comparison of Thermal Stability and Electrical Characterization between Ge2Sb2Te5 and Ge1Sb2Te4 Phase-Change Materials

	Comparison of Thermal Stability and Electrical Characterization between Ge2Sb2Te5 and Ge1Sb2Te4 Phase-Change Materials
	Liu, D ; Xu, L ; Liao, YB ; Dai, M ; Zhao, L ; Xu, J ; Wu, LC ; Ma, ZY ; Chen, KJ
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2009
卷号	48 期号:12 页码:121104-121104
关键词	THIN-FILMS MEMORY
ISSN号	0021-4922
通讯作者	Liu, D, Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94873]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu, D,Xu, L,Liao, YB,et al. Comparison of Thermal Stability and Electrical Characterization between Ge2Sb2Te5 and Ge1Sb2Te4 Phase-Change Materials[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(12):121104-121104.
APA	Liu, D.,Xu, L.,Liao, YB.,Dai, M.,Zhao, L.,...&Chen, KJ.(2009).Comparison of Thermal Stability and Electrical Characterization between Ge2Sb2Te5 and Ge1Sb2Te4 Phase-Change Materials.JAPANESE JOURNAL OF APPLIED PHYSICS,48(12),121104-121104.
MLA	Liu, D,et al."Comparison of Thermal Stability and Electrical Characterization between Ge2Sb2Te5 and Ge1Sb2Te4 Phase-Change Materials".JAPANESE JOURNAL OF APPLIED PHYSICS 48.12(2009):121104-121104.