The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory

	The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory
	Zhong, M ; Song, ZT ; Liu, B ; Chen, YF ; Gong, YF ; Rao, F ; Feng, SL ; Zhang, FX ; Xiang, YH
刊名	SCRIPTA MATERIALIA
	2009
卷号	60 期号:11 页码:957-959
关键词	RANDOM-ACCESS MEMORY DATA-STORAGE FILMS CELL
ISSN号	1359-6462
通讯作者	Zhong, M, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94827]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhong, M,Song, ZT,Liu, B,et al. The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory[J]. SCRIPTA MATERIALIA,2009,60(11):957-959.
APA	Zhong, M.,Song, ZT.,Liu, B.,Chen, YF.,Gong, YF.,...&Xiang, YH.(2009).The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory.SCRIPTA MATERIALIA,60(11),957-959.
MLA	Zhong, M,et al."The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory".SCRIPTA MATERIALIA 60.11(2009):957-959.