Oxygen gettering in Si by He ion implantation-induced cavity layer

	Oxygen gettering in Si by He ion implantation-induced cavity layer
	Ou, X ; Zhang, B ; Wu, AM ; Zhang, M ; Wang, X
刊名	NUCLEAR SCIENCE AND TECHNIQUES
	2009
卷号	20 期号:4 页码:202-207
关键词	BURIED OXIDE LAYERS SILICON DISLOCATIONS GENERATION VOIDS AU
ISSN号	1001-8042
通讯作者	Ou, X, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informart, Shanghai 200050, Peoples R China
学科主题	Nuclear Science & Technology; Physics, Nuclear
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94816]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Ou, X,Zhang, B,Wu, AM,et al. Oxygen gettering in Si by He ion implantation-induced cavity layer[J]. NUCLEAR SCIENCE AND TECHNIQUES,2009,20(4):202-207.
APA	Ou, X,Zhang, B,Wu, AM,Zhang, M,&Wang, X.(2009).Oxygen gettering in Si by He ion implantation-induced cavity layer.NUCLEAR SCIENCE AND TECHNIQUES,20(4),202-207.
MLA	Ou, X,et al."Oxygen gettering in Si by He ion implantation-induced cavity layer".NUCLEAR SCIENCE AND TECHNIQUES 20.4(2009):202-207.