The use of nanocavities for the fabrication of ultrathin buried oxide layers

	The use of nanocavities for the fabrication of ultrathin buried oxide layers
	Ou, X ; Kogler, R ; Mucklich, A ; Skorupa, W ; Moller, W ; Wang, X ; Vines, L
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	94 期号:1 页码:11903-11903
关键词	ION-IMPLANTATION SOI MOSFETS SILICON SI HELIUM SEPARATION DEFECTS TEMPERATURE HYDROGEN BUBBLES
ISSN号	0003-6951
通讯作者	Ou, X, Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden, Germany
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94802]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Ou, X,Kogler, R,Mucklich, A,et al. The use of nanocavities for the fabrication of ultrathin buried oxide layers[J]. APPLIED PHYSICS LETTERS,2009,94(1):11903-11903.
APA	Ou, X.,Kogler, R.,Mucklich, A.,Skorupa, W.,Moller, W.,...&Vines, L.(2009).The use of nanocavities for the fabrication of ultrathin buried oxide layers.APPLIED PHYSICS LETTERS,94(1),11903-11903.
MLA	Ou, X,et al."The use of nanocavities for the fabrication of ultrathin buried oxide layers".APPLIED PHYSICS LETTERS 94.1(2009):11903-11903.