Low-Consumption Phase Change Material with Good Data Retention Selected from SbxTe

	Low-Consumption Phase Change Material with Good Data Retention Selected from SbxTe
	Gu, YF ; Zhang, T ; Song, ZT ; Liu, B ; Feng, SL
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2010
卷号	10 期号:11 页码:7040-7044
关键词	RANDOM-ACCESS MEMORY SB CRYSTALLIZATION FILMS
ISSN号	1533-4880
通讯作者	Gu, YF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94741]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Gu, YF,Zhang, T,Song, ZT,et al. Low-Consumption Phase Change Material with Good Data Retention Selected from SbxTe[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2010,10(11):7040-7044.
APA	Gu, YF,Zhang, T,Song, ZT,Liu, B,&Feng, SL.(2010).Low-Consumption Phase Change Material with Good Data Retention Selected from SbxTe.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,10(11),7040-7044.
MLA	Gu, YF,et al."Low-Consumption Phase Change Material with Good Data Retention Selected from SbxTe".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 10.11(2010):7040-7044.