Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film

	Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film
	Lu, YG ; Song, SN ; Song, ZT ; Yao, DN ; Xi, W ; Yin, WJ ; Zheng, H ; Feng, SL
刊名	APPLIED PHYSICS EXPRESS
	2010
卷号	3 期号:11 页码:111201-111201
关键词	ELECTRICAL-PROPERTIES CELL
ISSN号	1882-0778
通讯作者	Lu, YG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94718]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Lu, YG,Song, SN,Song, ZT,et al. Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film[J]. APPLIED PHYSICS EXPRESS,2010,3(11):111201-111201.
APA	Lu, YG.,Song, SN.,Song, ZT.,Yao, DN.,Xi, W.,...&Feng, SL.(2010).Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film.APPLIED PHYSICS EXPRESS,3(11),111201-111201.
MLA	Lu, YG,et al."Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film".APPLIED PHYSICS EXPRESS 3.11(2010):111201-111201.