Two-Step Chemical Mechanical Polishing of Sapphire Substrate
Zhang, ZF ; Liu, WL ; Song, ZT ; Hu, XK
刊名JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2010
卷号157期号:6页码:H688-H691
关键词PROCESS PARAMETERS COLLOIDAL SILICA CMP PLANARIZATION ABRASIVES
ISSN号0013-4651
通讯作者Zhang, ZF, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Electrochemistry; Materials Science, Coatings & Films
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/94680]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, ZF,Liu, WL,Song, ZT,et al. Two-Step Chemical Mechanical Polishing of Sapphire Substrate[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2010,157(6):H688-H691.
APA Zhang, ZF,Liu, WL,Song, ZT,&Hu, XK.(2010).Two-Step Chemical Mechanical Polishing of Sapphire Substrate.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,157(6),H688-H691.
MLA Zhang, ZF,et al."Two-Step Chemical Mechanical Polishing of Sapphire Substrate".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157.6(2010):H688-H691.
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