Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer

	Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer
	Shang, F ; Zhai, JW ; Song, SN ; Song, ZT ; Wang, CZ
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2010
卷号	49 期号:9 页码:94202-94202
关键词	SRTIO3 THIN-FILMS CONDUCTIVITY STORAGE
ISSN号	0021-4922
通讯作者	Shang, F, Tongji Univ, Funct Mat Res Lab, Shanghai 20092, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94647]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Shang, F,Zhai, JW,Song, SN,et al. Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2010,49(9):94202-94202.
APA	Shang, F,Zhai, JW,Song, SN,Song, ZT,&Wang, CZ.(2010).Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer.JAPANESE JOURNAL OF APPLIED PHYSICS,49(9),94202-94202.
MLA	Shang, F,et al."Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer".JAPANESE JOURNAL OF APPLIED PHYSICS 49.9(2010):94202-94202.