A generic numerical model for detection of terahertz radiation in MOS field-effect transistors

	A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
	Wang, YL ; Yan, ZF ; Zhu, JX ; Zhang, LN ; Lin, XN ; He, J ; Cao, JC ; Chan, MS
刊名	SOLID-STATE ELECTRONICS
	2010
卷号	54 期号:8 页码:791-795
关键词	2-DIMENSIONAL ELECTRON FLUID CURRENT INSTABILITY RESONANT DETECTION INVERSION-LAYERS DC CURRENT
ISSN号	0038-1101
通讯作者	He, J, Peking Univ, Inst Microelect, Sch Elect Engn & Comp Sci, TSRC, Beijing 100871, Peoples R China
学科主题	Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94630]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, YL,Yan, ZF,Zhu, JX,et al. A generic numerical model for detection of terahertz radiation in MOS field-effect transistors[J]. SOLID-STATE ELECTRONICS,2010,54(8):791-795.
APA	Wang, YL.,Yan, ZF.,Zhu, JX.,Zhang, LN.,Lin, XN.,...&Chan, MS.(2010).A generic numerical model for detection of terahertz radiation in MOS field-effect transistors.SOLID-STATE ELECTRONICS,54(8),791-795.
MLA	Wang, YL,et al."A generic numerical model for detection of terahertz radiation in MOS field-effect transistors".SOLID-STATE ELECTRONICS 54.8(2010):791-795.