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	Vacancy defects and optoelectrical properties for fluorine tin oxide thin films with various SnF2contents
	Yin, Chongshan; Zhou, Yawei; Xu, Wenwu; Li, Jingjing; Liu, Yong; Zhao, Bin; Chen, Zhiquan; He, Chunqing; Mao, Wenfeng; Ito, Kenji
刊名	Journal of Applied Physics
	2018
卷号	123期号:2
ISSN号	0021-8979
DOI	10.1063/1.5004209
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3741109
专题	武汉大学
推荐引用方式 GB/T 7714	Yin, Chongshan,Zhou, Yawei,Xu, Wenwu,et al. Vacancy defects and optoelectrical properties for fluorine tin oxide thin films with various SnF2contents[J]. Journal of Applied Physics,2018,123(2).
APA	Yin, Chongshan.,Zhou, Yawei.,Xu, Wenwu.,Li, Jingjing.,Liu, Yong.,...&Ito, Kenji.(2018).Vacancy defects and optoelectrical properties for fluorine tin oxide thin films with various SnF2contents.Journal of Applied Physics,123(2).
MLA	Yin, Chongshan,et al."Vacancy defects and optoelectrical properties for fluorine tin oxide thin films with various SnF2contents".Journal of Applied Physics 123.2(2018).

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