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	Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning
	Yan, Xiaobing; Zhang, Lei; Chen, Huawei; Li, Xiaoyan; Wang, Jingjuan; Liu, Qi; Lu, Chao; Chen, Jingsheng; Wu, Huaqiang; Zhou, Peng
刊名	ADVANCED FUNCTIONAL MATERIALS
	2018
卷号	28期号:40
关键词	artificial synapses graphene quantum dots memristors
ISSN号	1616-301X
URL标识	查看原文
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3600735
专题	复旦大学上海医学院
推荐引用方式 GB/T 7714	Yan, Xiaobing,Zhang, Lei,Chen, Huawei,et al. Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(40).
APA	Yan, Xiaobing.,Zhang, Lei.,Chen, Huawei.,Li, Xiaoyan.,Wang, Jingjuan.,...&Zhou, Peng.(2018).Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning.ADVANCED FUNCTIONAL MATERIALS,28(40).
MLA	Yan, Xiaobing,et al."Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning".ADVANCED FUNCTIONAL MATERIALS 28.40(2018).

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