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	Characterization of p-type multicrystalline silicon prepared by cold crucible continuous melting and directional solidification
	Huang, Feng; Chen, Ruirun*; Guo, Jingjie; Ding, Hongsheng; Su, Yanqing
刊名	Materials Science in Semiconductor Processing
	2017
卷号	68页码:62-67
关键词	Multicrystalline silicon Directional solidification Electrical resistivity Minority carrier lifetime
ISSN号	1369-8001
DOI	10.1016/j.mssp.2017.06.007
URL标识	查看原文
WOS记录号	WOS:000406232900010;EI:20172403765390
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3389527
专题	武汉理工大学
作者单位	[Huang, Feng] Wuhan Univ Technol, Hubei Key Lab Adv Technol Automobile Parts, Wuhan 430070, Hubei, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Feng,Chen, Ruirun*,Guo, Jingjie,et al. Characterization of p-type multicrystalline silicon prepared by cold crucible continuous melting and directional solidification[J]. Materials Science in Semiconductor Processing,2017,68:62-67.
APA	Huang, Feng,Chen, Ruirun*,Guo, Jingjie,Ding, Hongsheng,&Su, Yanqing.(2017).Characterization of p-type multicrystalline silicon prepared by cold crucible continuous melting and directional solidification.Materials Science in Semiconductor Processing,68,62-67.
MLA	Huang, Feng,et al."Characterization of p-type multicrystalline silicon prepared by cold crucible continuous melting and directional solidification".Materials Science in Semiconductor Processing 68(2017):62-67.

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