QQ客服 官方微博 反馈留言

	High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes
	Li, Haixia; Zhao, Wanqiu; Liu, Yang; Liang, Yi; Ma, Liang; Zhu, Meng; Yi, Chujun; Xiong, Lun*; Gao, Yihua*
刊名	MATERIALS LETTERS
	2019
卷号	239页码:45-47
关键词	P-type ZnO ZnO nanowire arrays P-n heterojunction White light-emitting diodes
ISSN号	0167-577X
DOI	10.1016/j.matlet.2018.12.041
URL标识	查看原文
WOS记录号	WOS:000456707800012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3387575
专题	武汉理工大学
作者单位	1.[Ma, Liang 2.Zhu, Meng 3.Xiong, Lun 4.Gao, Yihua 5.Xiong, L 6.Gao, YH 7.Liu, Yang 8.Li, Haixia] Wuhan Inst Technol, Sch Math & Phys, Hubei Key Lab Opt Informat & Pattern Recognit, Guanggu 1st Rd 206, Wuhan 430205, Hubei, Peoples R China.
推荐引用方式 GB/T 7714	Li, Haixia,Zhao, Wanqiu,Liu, Yang,et al. High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes[J]. MATERIALS LETTERS,2019,239:45-47.
APA	Li, Haixia.,Zhao, Wanqiu.,Liu, Yang.,Liang, Yi.,Ma, Liang.,...&Gao, Yihua*.(2019).High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes.MATERIALS LETTERS,239,45-47.
MLA	Li, Haixia,et al."High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes".MATERIALS LETTERS 239(2019):45-47.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。