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	Synthesis and photoluminescence of doped Si3N4 nanowires with various valence electron configurations
	Huang, Zhifeng; Wang, Zhihao; Yuan, Hailong; Zhang, Jianwen; Chen, Fei*; Shen, Qiang; Zhang, Lianmeng
刊名	Journal of Materials Science
	2018
卷号	53期号:19页码:13573-13583
ISSN号	0022-2461
DOI	10.1007/s10853-018-2330-4
URL标识	查看原文
WOS记录号	WOS:000440047900023;EI:20181705049916
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3385463
专题	武汉理工大学
作者单位	1.[Shen, Qiang 2.Yuan, Hailong 3.Chen, Fei 4.Zhang, Jianwen 5.Wang, Zhihao 6.Zhang, Lianmeng 7.Huang, Zhifeng] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Hubei, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Zhifeng,Wang, Zhihao,Yuan, Hailong,et al. Synthesis and photoluminescence of doped Si3N4 nanowires with various valence electron configurations[J]. Journal of Materials Science,2018,53(19):13573-13583.
APA	Huang, Zhifeng.,Wang, Zhihao.,Yuan, Hailong.,Zhang, Jianwen.,Chen, Fei*.,...&Zhang, Lianmeng.(2018).Synthesis and photoluminescence of doped Si3N4 nanowires with various valence electron configurations.Journal of Materials Science,53(19),13573-13583.
MLA	Huang, Zhifeng,et al."Synthesis and photoluminescence of doped Si3N4 nanowires with various valence electron configurations".Journal of Materials Science 53.19(2018):13573-13583.

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