QQ客服 官方微博 反馈留言

	Highly efficient GaN-based high-power flip-chip light-emitting diodes
	Zhou, Shengjun; Liu, Xingtong; Yan, Han; Chen, Zhiwen; Liu, Yingce; Liu, Sheng*
刊名	OPTICS EXPRESS
	2019
卷号	27期号:12页码:A669-A692
ISSN号	1094-4087
DOI	10.1364/OE.27.00A669
URL标识	查看原文
WOS记录号	WOS:000470849000008
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3381896
专题	武汉理工大学
作者单位	1.[Liu, Sheng 2.Liu, Xingtong 3.Zhou, Shengjun] Wuhan Univ, Res Ctr Elect Mfg & Packaging Integrat, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China.
推荐引用方式 GB/T 7714	Zhou, Shengjun,Liu, Xingtong,Yan, Han,et al. Highly efficient GaN-based high-power flip-chip light-emitting diodes[J]. OPTICS EXPRESS,2019,27(12):A669-A692.
APA	Zhou, Shengjun,Liu, Xingtong,Yan, Han,Chen, Zhiwen,Liu, Yingce,&Liu, Sheng*.(2019).Highly efficient GaN-based high-power flip-chip light-emitting diodes.OPTICS EXPRESS,27(12),A669-A692.
MLA	Zhou, Shengjun,et al."Highly efficient GaN-based high-power flip-chip light-emitting diodes".OPTICS EXPRESS 27.12(2019):A669-A692.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。