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	Electrical resistivity distribution of silicon ingot grown by cold crucible continuous melting and directional solidification
	Huang, Feng; Chen, Ruirun*; Guo, Jingjie; Ding, Hongsheng; Su, Yanqing; Yang, Jieren; Fu, Hengzhi
刊名	Materials Science in Semiconductor Processing
	2014
卷号	23期号:1页码:14-19
关键词	Electrical resistivity Silicon ingot Cold crucible Directional solidification
ISSN号	1369-8001
DOI	10.1016/j.mssp.2014.02.020
URL标识	查看原文
WOS记录号	WOS:000335609600003;EI:20141117455998
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3381790
专题	武汉理工大学
作者单位	1.[Yang, Jieren 2.Su, Yanqing 3.Huang, Feng 4.Chen, Ruirun 5.Fu, Hengzhi 6.Guo, Jingjie 7.Ding, Hongsheng] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Feng,Chen, Ruirun*,Guo, Jingjie,et al. Electrical resistivity distribution of silicon ingot grown by cold crucible continuous melting and directional solidification[J]. Materials Science in Semiconductor Processing,2014,23(1):14-19.
APA	Huang, Feng.,Chen, Ruirun*.,Guo, Jingjie.,Ding, Hongsheng.,Su, Yanqing.,...&Fu, Hengzhi.(2014).Electrical resistivity distribution of silicon ingot grown by cold crucible continuous melting and directional solidification.Materials Science in Semiconductor Processing,23(1),14-19.
MLA	Huang, Feng,et al."Electrical resistivity distribution of silicon ingot grown by cold crucible continuous melting and directional solidification".Materials Science in Semiconductor Processing 23.1(2014):14-19.

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