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	Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering
	Hu, Changkui; Chen, Qiong; Chen, Fengxiang; Gfroerer, T. H.; Wanlass, M. W.; Zhang, Yong*
刊名	Light: Science and Applications
	2018
卷号	7期号:1页码:23
ISSN号	2047-7538
DOI	10.1038/s41377-018-0016-y
URL标识	查看原文
WOS记录号	WOS:000436046900003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3380799
专题	武汉理工大学
作者单位	1.[Chen, Qiong 2.Chen, Fengxiang 3.Hu, Changkui 4.Zhang, Yong] Univ North Carolina Charlotte, Charlotte, NC 28223 USA.
推荐引用方式 GB/T 7714	Hu, Changkui,Chen, Qiong,Chen, Fengxiang,et al. Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering[J]. Light: Science and Applications,2018,7(1):23.
APA	Hu, Changkui,Chen, Qiong,Chen, Fengxiang,Gfroerer, T. H.,Wanlass, M. W.,&Zhang, Yong*.(2018).Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering.Light: Science and Applications,7(1),23.
MLA	Hu, Changkui,et al."Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering".Light: Science and Applications 7.1(2018):23.

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