| High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition | |
| Sun, Qingyun; Zhu, Peipei; Xu, Qingfang; Tu, Rong; Zhang, Song*; Shi, Ji; Li, Haiwen; Zhang, Lianmeng; Goto, Takashi; Yan, Jiasheng | |
| 刊名 | Journal of the American Ceramic Society
 |
| 2018 | |
| 卷号 | 101期号:3页码:1048-1057 |
| 关键词 | 3C‐SiC (111) heteroepitaxial growth laser CVD orientation Si (110) |
| ISSN号 | 1551-2916 |
| DOI | 10.1111/jace.15260 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000419096700011 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3380290 |
| 专题 | 武汉理工大学 |
| 作者单位 | 1.[Tu, Rong 2.Xu, Qingfang 3.Sun, Qingyun 4.Zhu, Peipei 5.Zhang, Song 6.Goto, Takashi 7.Zhang, Lianmeng 8.Shi, Ji 9.Li, Haiwen 10.Yan, Jiasheng] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Hubei, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Sun, Qingyun,Zhu, Peipei,Xu, Qingfang,et al. High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition[J]. Journal of the American Ceramic Society,2018,101(3):1048-1057. |
| APA | Sun, Qingyun.,Zhu, Peipei.,Xu, Qingfang.,Tu, Rong.,Zhang, Song*.,...&Li, Shusen.(2018).High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition.Journal of the American Ceramic Society,101(3),1048-1057. |
| MLA | Sun, Qingyun,et al."High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition".Journal of the American Ceramic Society 101.3(2018):1048-1057. |
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