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	Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature
	Zhang, Song; Xu, Qingfang; Hu, Zhiying; Zhu, Peipei; Tu, Rong*; Zhang, Lianmeng（张联盟）; Han, Mingxu; Goto, Takashi; Yan, Jiasheng; Luo, Sijun
刊名	Ceramics International
	2016
卷号	42期号:3页码:4632-4635
关键词	beta-SiC Epitaxial growth Laser CVD Deposition rates
ISSN号	0272-8842
DOI	10.1016/j.ceramint.2015.11.132
URL标识	查看原文
WOS记录号	WOS:000369190900112;EI:20155101684452
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3378939
专题	武汉理工大学
作者单位	1.[Zhang, Lianmeng 2.Tu, Rong 3.Xu, Qingfang 4.Hu, Zhiying 5.Zhang, Song 6.Zhu, Peipei] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, 122 Luoshi Rd, Wuhan 430070, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Song,Xu, Qingfang,Hu, Zhiying,et al. Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature[J]. Ceramics International,2016,42(3):4632-4635.
APA	Zhang, Song.,Xu, Qingfang.,Hu, Zhiying.,Zhu, Peipei.,Tu, Rong*.,...&Luo, Sijun.(2016).Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature.Ceramics International,42(3),4632-4635.
MLA	Zhang, Song,et al."Ultra-fast epitaxial growth of β-SiC films on α(4H)-SiC using hexamethyldisilane (HMDS) at low temperature".Ceramics International 42.3(2016):4632-4635.

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