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	Band gap engineering of MnO2 through in situ Al-doping for applicable pseudocapacitors
	Li, Tianqi; Wu, Jiabin; Xiao, Xu; Zhang, Bingyan; Hu, Zhimi; Zhou, Jun; Yang, Peihua; Chen, Xun; Wang, Bo; Huang, Liang*
刊名	RSC Advances
	2016
卷号	6期号:17页码:13914-13919
ISSN号	2046-2069
DOI	10.1039/c5ra26830c
URL标识	查看原文
WOS记录号	WOS:000369639400038;EI:20160701924166
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3373815
专题	武汉理工大学
作者单位	1.[Zhang, Bingyan 2.Huang, Liang 3.Wang, Bo 4.Zhou, Jun 5.Yang, Peihua 6.Chen, Xun 7.Xiao, Xu 8.Li, Tianqi 9.Hu, Zhimi] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China.
推荐引用方式 GB/T 7714	Li, Tianqi,Wu, Jiabin,Xiao, Xu,et al. Band gap engineering of MnO2 through in situ Al-doping for applicable pseudocapacitors[J]. RSC Advances,2016,6(17):13914-13919.
APA	Li, Tianqi.,Wu, Jiabin.,Xiao, Xu.,Zhang, Bingyan.,Hu, Zhimi.,...&Huang, Liang*.(2016).Band gap engineering of MnO2 through in situ Al-doping for applicable pseudocapacitors.RSC Advances,6(17),13914-13919.
MLA	Li, Tianqi,et al."Band gap engineering of MnO2 through in situ Al-doping for applicable pseudocapacitors".RSC Advances 6.17(2016):13914-13919.

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