Native p-type transparent conductive CuI via intrinsic defects

	Native p-type transparent conductive CuI via intrinsic defects
	Wang J ; Li JB ; Li SS
刊名	journal of applied physics
	2011
卷号	110 期号:5 页码:54907
关键词	HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS AUGMENTED-WAVE METHOD COPPER HALIDES BAND-STRUCTURE II-VI SEMICONDUCTORS EMISSION DIAMOND CUBR CUCL
ISSN号	0021-8979
通讯作者	li, jb (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china, jbli@semi.ac.cn
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22699]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wang J,Li JB,Li SS. Native p-type transparent conductive CuI via intrinsic defects[J]. journal of applied physics,2011,110(5):54907.
APA	Wang J,Li JB,&Li SS.(2011).Native p-type transparent conductive CuI via intrinsic defects.journal of applied physics,110(5),54907.
MLA	Wang J,et al."Native p-type transparent conductive CuI via intrinsic defects".journal of applied physics 110.5(2011):54907.