Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics

	Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
	Lv YJ ; Lin ZJ ; Meng LG ; Yu YX ; Luan CB ; Cao ZF ; Chen H ; Sun BQ ; Wang ZG
刊名	applied physics letters
	2011
卷号	99 期号:12 页码:123504
ISSN号	0003-6951
通讯作者	lin, zj (reprint author), shandong univ, sch phys, jinan 250100, peoples r china, linzj@sdu.edu.cn
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china[10774090]; national basic research program of china[2007cb936602]
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22683]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Lv YJ,Lin ZJ,Meng LG,et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. applied physics letters,2011,99(12):123504.
APA	Lv YJ.,Lin ZJ.,Meng LG.,Yu YX.,Luan CB.,...&Wang ZG.(2011).Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics.applied physics letters,99(12),123504.
MLA	Lv YJ,et al."Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics".applied physics letters 99.12(2011):123504.