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	Optoelectronic Synapse Based on IGZO‐Alkylated Graphene Oxide Hybrid Structure
	Sun, Jia; Oh, Seyong; Choi, Yongsuk; Seo, Seunghwan; Oh, Min Jun; Lee, Minhwan; Lee, Won Bo; Yoo, Pil J.; Cho, Jeong Ho*; Park, Jin-Hong*
刊名	Advanced Functional Materials
	2018
卷号	28期号:47页码:-
关键词	handwritten digit pattern recognition indium–gallium–zinc oxide photosynaptic devices neuromorphic computing optoelectronic spiking process optoelectronic synapses
ISSN号	1616-3028
DOI	10.1002/adfm.201804397
URL标识	查看原文
WOS记录号	WOS:000450371400012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3333397
专题	中南大学
作者单位	1.[Yoo, Pil J. 2.Cho, Jeong Ho 3.Park, Jin-Hong 4.Sun, Jia 5.Choi, Yongsuk] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea.
推荐引用方式 GB/T 7714	Sun, Jia,Oh, Seyong,Choi, Yongsuk,et al. Optoelectronic Synapse Based on IGZO‐Alkylated Graphene Oxide Hybrid Structure[J]. Advanced Functional Materials,2018,28(47):-.
APA	Sun, Jia.,Oh, Seyong.,Choi, Yongsuk.,Seo, Seunghwan.,Oh, Min Jun.,...&Park, Jin-Hong*.(2018).Optoelectronic Synapse Based on IGZO‐Alkylated Graphene Oxide Hybrid Structure.Advanced Functional Materials,28(47),-.
MLA	Sun, Jia,et al."Optoelectronic Synapse Based on IGZO‐Alkylated Graphene Oxide Hybrid Structure".Advanced Functional Materials 28.47(2018):-.

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