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	Preparation and characterization of PZT thin films deposited on PZT buffer layer with different lead content
	Li, Qi; Wang, Xing; Li, Chen; Wang, Fuan; Xu, Wencai; Zou, Helin
刊名	INTEGRATED FERROELECTRICS
	2017
卷号	183页码:182-192
关键词	PZT thin films buffer layer lead content (100) preferential orientation sol-gel methods
ISSN号	1058-4587
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3308767
专题	大连理工大学
作者单位	Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian, Peoples R China.
推荐引用方式 GB/T 7714	Li, Qi,Wang, Xing,Li, Chen,et al. Preparation and characterization of PZT thin films deposited on PZT buffer layer with different lead content[J]. INTEGRATED FERROELECTRICS,2017,183:182-192.
APA	Li, Qi,Wang, Xing,Li, Chen,Wang, Fuan,Xu, Wencai,&Zou, Helin.(2017).Preparation and characterization of PZT thin films deposited on PZT buffer layer with different lead content.INTEGRATED FERROELECTRICS,183,182-192.
MLA	Li, Qi,et al."Preparation and characterization of PZT thin films deposited on PZT buffer layer with different lead content".INTEGRATED FERROELECTRICS 183(2017):182-192.

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