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	Controllable a-Si:H/c-Si interface passivation by residual SiH4 molecules in H-2 plasma
	Liu, Wenzhu; Zhang, Liping; Cong, Shiyuan; Chen, Renfang; Wu, Zhuopeng; Meng, Fanying; Shi, Qiang; Liu, Zhengxin
刊名	SOLAR ENERGY MATERIALS AND SOLAR CELLS
	2018
卷号	174页码:233-239
关键词	Residual SiH4 PECVD Silicon heterojunction solar cell A-Si:H/c-Si interface C-Si surface passivation
ISSN号	0927-0248
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3276967
专题	大连理工大学
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China. 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 3.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Liaoning, Peoples R China. 4.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Wenzhu,Zhang, Liping,Cong, Shiyuan,et al. Controllable a-Si:H/c-Si interface passivation by residual SiH4 molecules in H-2 plasma[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2018,174:233-239.
APA	Liu, Wenzhu.,Zhang, Liping.,Cong, Shiyuan.,Chen, Renfang.,Wu, Zhuopeng.,...&Liu, Zhengxin.(2018).Controllable a-Si:H/c-Si interface passivation by residual SiH4 molecules in H-2 plasma.SOLAR ENERGY MATERIALS AND SOLAR CELLS,174,233-239.
MLA	Liu, Wenzhu,et al."Controllable a-Si:H/c-Si interface passivation by residual SiH4 molecules in H-2 plasma".SOLAR ENERGY MATERIALS AND SOLAR CELLS 174(2018):233-239.

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