Rotational driven RF variable capacitors with post-CMOS processes

	Rotational driven RF variable capacitors with post-CMOS processes
	Gu, L ; Li, XX
刊名	IEEE ELECTRON DEVICE LETTERS
	2008
卷号	29 期号:2 页码:195-197
关键词	LARGE TUNING RANGE MEMS
ISSN号	0741-3106
通讯作者	Gu, L, Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic
收录类别	SCI
语种	英语
公开日期	2011-12-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/38597]
专题	上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式 GB/T 7714	Gu, L,Li, XX. Rotational driven RF variable capacitors with post-CMOS processes[J]. IEEE ELECTRON DEVICE LETTERS,2008,29(2):195-197.
APA	Gu, L,&Li, XX.(2008).Rotational driven RF variable capacitors with post-CMOS processes.IEEE ELECTRON DEVICE LETTERS,29(2),195-197.
MLA	Gu, L,et al."Rotational driven RF variable capacitors with post-CMOS processes".IEEE ELECTRON DEVICE LETTERS 29.2(2008):195-197.