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	Total Dose Response of Hafnium Oxide based Metal-Oxide-Semiconductor Structure under Gamma-ray Irradiation
	Ding, Man; Cheng, Yonghong; Liu, Xin; Li, Xiaolong
刊名	IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
	2014
卷号	21期号:[db:dc_citation_issue]页码:1792-1800
关键词	total dose response Schottky emission oxygen vacancy Hafnium oxide gamma-ray irradiation
ISSN号	1070-9878
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3273004
专题	西安交通大学
推荐引用方式 GB/T 7714	Ding, Man,Cheng, Yonghong,Liu, Xin,et al. Total Dose Response of Hafnium Oxide based Metal-Oxide-Semiconductor Structure under Gamma-ray Irradiation[J]. IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION,2014,21([db:dc_citation_issue]):1792-1800.
APA	Ding, Man,Cheng, Yonghong,Liu, Xin,&Li, Xiaolong.(2014).Total Dose Response of Hafnium Oxide based Metal-Oxide-Semiconductor Structure under Gamma-ray Irradiation.IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION,21([db:dc_citation_issue]),1792-1800.
MLA	Ding, Man,et al."Total Dose Response of Hafnium Oxide based Metal-Oxide-Semiconductor Structure under Gamma-ray Irradiation".IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION 21.[db:dc_citation_issue](2014):1792-1800.

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