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	A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement
	Wei, Yi; Lin, Yiren; Yang, Xichuan; Tan, Xin; Su, Jia; Song, Chengyuan; Liu, Aimin
刊名	AIP ADVANCES
	2018
卷号	8
ISSN号	2158-3226
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3264335
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Phys, Dalian 116024, Liaoning, Peoples R China. 2.Dalian Univ Technol, State Key Lab Fine Chem, Inst Artificial Photosynth, DUT KTH Joint Educ & Res Ctr Mol Devices, Dalian 116024, Liaoning, Peoples R China. 3.Solargiga Energy Holdings Ltd, Jinzhou 121000, Peoples R China. 4.South Univ Sci & Technol China, Dept Biol, Shenzhen 518058, Guangdong, Peoples R China.
推荐引用方式 GB/T 7714	Wei, Yi,Lin, Yiren,Yang, Xichuan,et al. A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement[J]. AIP ADVANCES,2018,8.
APA	Wei, Yi.,Lin, Yiren.,Yang, Xichuan.,Tan, Xin.,Su, Jia.,...&Liu, Aimin.(2018).A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement.AIP ADVANCES,8.
MLA	Wei, Yi,et al."A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement".AIP ADVANCES 8(2018).

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