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	High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based devices and ICs validated by simulation results
	Zhang Haipeng; Geng Lu; Lin Mi; Zhang Zhonghai; Lu Weifeng; Wang Xiaoyuan; Wang Ying; Zhang Qiang; Bai Jianling; Wang Dejun
	2018
会议名称	2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
会议日期	2018-01-01
关键词	InGaN/GaN/AlGaN High voltage RTD ESD protection GaN/InGaN-based devices and ICs United quantum regulation
会议录	2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/3256912
专题	大连理工大学
作者单位	1.Hangzhou Dianzi Univ, Sch Microelect, Sch Elect & Informat, Hangzhou 310018, Peoples R China. 2.Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Control Sci & Engn, Liaoning Integrated Circuit Technol Key Lab, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Zhang Haipeng,Geng Lu,Lin Mi,et al. High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based devices and ICs validated by simulation results[C]. 见:2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). 2018-01-01.

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