QQ客服 官方微博 反馈留言

	Reusability of contaminated seed crystal for cast quasi-single crystalline silicon ingots
	Li, Zaoyang; Liu, Lijun; Zhou, Genshu
刊名	JOURNAL OF CRYSTAL GROWTH
	2015
卷号	416期号:[db:dc_citation_issue]页码:159-163
关键词	Silicon Crystal growth Computer simulation Impurity Seed crystal
ISSN号	0022-0248
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3254452
专题	西安交通大学
推荐引用方式 GB/T 7714	Li, Zaoyang,Liu, Lijun,Zhou, Genshu. Reusability of contaminated seed crystal for cast quasi-single crystalline silicon ingots[J]. JOURNAL OF CRYSTAL GROWTH,2015,416([db:dc_citation_issue]):159-163.
APA	Li, Zaoyang,Liu, Lijun,&Zhou, Genshu.(2015).Reusability of contaminated seed crystal for cast quasi-single crystalline silicon ingots.JOURNAL OF CRYSTAL GROWTH,416([db:dc_citation_issue]),159-163.
MLA	Li, Zaoyang,et al."Reusability of contaminated seed crystal for cast quasi-single crystalline silicon ingots".JOURNAL OF CRYSTAL GROWTH 416.[db:dc_citation_issue](2015):159-163.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。