CHEMICAL MECHANICAL MATERIAL REMOVAL OF SILICON DIOXIDE BY A SINGLE PAD ASPERITY | |
Yang, Shuo; Wang, Lin; Zhou, Ping; Yan, Ying; Jin, Zhuji | |
2019 | |
会议名称 | 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) |
会议日期 | 2019-01-01 |
会议录 | 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3230147 |
专题 | 大连理工大学 |
作者单位 | Dalian Univ Technol, Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116024, Peoples R China. |
推荐引用方式 GB/T 7714 | Yang, Shuo,Wang, Lin,Zhou, Ping,et al. CHEMICAL MECHANICAL MATERIAL REMOVAL OF SILICON DIOXIDE BY A SINGLE PAD ASPERITY[C]. 见:2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC). 2019-01-01. |
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